transmissive photosensors (photo lnterrupters) 1 publication date: april 2004 shg00017bed cnz1021 (on1021) , CNZ1023 (on1023) , cna1009h (on1024) photo lnterrupter for contactless sw, object detection features ? highly precise position detection: 0.25 mm ? gap width: 3 mm (cnz1021, CNZ1023) 5 mm (cna1009h) ? the type directly attached to pcb ....... cnz1021 screw-fastened type (one side) ............ CNZ1023 the type directly attached to pcb .... ... cna1009h (with a positioning pins) overview cnz1021, CNZ1023 and cna1009h are a transmis- sive photosensor in which a high efficiency gaas infra- red light emitting diode is used as the light emitting ele- ment, and a high sensitivity phototransistor is used as the light detecting element. the two elements are ar- ranged so as to face each other, and objects passing be- tween them are detected. cna1009h unit: mm CNZ1023 unit: mm cnz1021 unit: mm a a' 23 14 sec. a-a' 12.0 (c1.2) 3.00.15 (7.6) (2.54) (2-0.45) (2-0.45) (2.5) 2.1 0.15 2.5 10.0 10.0 min. device center 5.0 0.40.1 23 14 a a' sec. a-a' 12.0 (c1.2) 3.0 0.15 (7.6) (2.54) (2-0.45) 2.0 (2-0.45) (2.5) 3.0 2.5 10.0 10.0 min. device center 2.1 0.15 6.0 5.0 12.0 0.15 18.0 0.4 0.1 0.5 3.5 2-r1.5 (4-r2) +0.15 - 0 3.0 +0.15 - 0 sec. a-a' (c1) (2.54) 2.2 0.15 5.2 0.1 5.0 6.0 0.5 0.1 23 14 a a' 14.0 5.0 0.15 (10.0) 6.6 0.1 2.35 0.1 (2-0.45) (2.5) 2.5 10.0 10.0 min. device center 2-0.7 (2-0.45) 2- 0.7 0.1 (note) 1. tolerance unless otherwise specified is 0.3 2. ( ) dimension is reference 1: anode 2: cathode 3: collector 4: emitter pistr104-001 package note) the part numbers in the parenthesis show conventional part number. 1: anode 2: cathode 3: collector 4: emitter pistr104-003 package 1: anode 2: cathode 3: collector 4: emitter pistr104-004 package
2 cnz1021, CNZ1023, cna1009h shg00017bed absolute maximum ratings t a = 25 c 50 ? r l v cc sig. out 10% 90% sig. in t r t f (input pulse) (output pulse) t r : rise time t f : fall time parameter symbol rating unit input (light reverse cnz1021 v r 3v emitting diode) voltage CNZ1023 3 cna1009h 5 forward current i f 50 ma power dissipation * 1 p d 75 mw output (photo collector-emitter voltage v ceo 30 v transistor) (base open) emitter-collector voltage v eco 5v (base open) collector current i c 20 ma collector power dissipation * 2 p c 100 mw temperature operating ambient temperature t opr ? 25 to + 85 c storage temperature t stg ? 40 to + 100 c parameter symbol conditions min typ max unit input forward voltage v f i f = 20 ma 1.25 1.40 v characteristics reverse current i r v r = 3 v 10 a output collector-emitter cutoff current i ceo v ce = 10 v 10 200 na characteristics (base open) transfer collector current i c v cc = 5 v, i f = 20 ma, r l = 100 ? 0.5 15.0 ma characteristics collector-emitter saturation voltage v ce(sat) i f = 40 ma, i c = 1 ma 0.4 v rise time * t r v cc = 5 v, i c = 1 ma 5 s fall time * t f r l = 100 ? 5 s electrical-optical characteristics t a = 25 c 3 c note) 1. input and output are practiced by electricity. 2. this device is designed be disregarded radiation. 3. * : switching time measurement circuit note) * 1: input power derating ratio is 1.0 mw/ c at t a 25 c. * 2: output power derating ratio is 1.33 mw/ c at t a 25 c.
cnz1021, CNZ1023, cna1009h 3 shg00017bed i f , i c ? t a i f ? v f v f ? t a i c ? i f i c ? v ce ? i c ? t a i ceo ? t a t r ? i c ? i c ? d 60 50 40 30 20 10 0 60 50 40 30 20 10 0 0 20406080100 ? 25 10 2 10 1 10 ? 1 10 ? 2 10 1 10 ? 1 10 ? 2 10 2 10 ? 1 11010 2 10 ? 1 11010 2 t a = 25 c t a = 25 c v ce = 5 v i f = 20 ma v ce = 10 v v ce = 5 v t a = 25 c v cc = 5 v t a = 25 c 100 80 60 40 20 0 1234 6 5 0 v ce = 5 v t a = 25 c i f = 20 ma ambient temperature t a ( c ) forward current i f , collector current i c (ma) forward current i f (ma) collector current i c (ma) collector-emitter voltage v ce (v) collector current i c (ma) distance d (mm) relative collector current ? i c (%) criterion 0 0.4 1.2 1.6 2.0 2.4 0.8 0 1.6 1.2 0.8 0.4 0 forward voltage v f (v) forward current i f (ma) ambient temperature t a ( c ) forward voltage v f (v) 160 120 80 40 ? 40 0 40 80 ? 40 0 40 80 0 ? 40 04080 10 2 10 1 10 ? 1 10 2 10 ? 2 10 3 10 2 10 1 10 ? 2 10 ? 1 10 ? 1 110 i f i c 10 ma 1 ma i f = 50 ma i f = 30 ma 20 ma 10 ma r l = 1 k ? 500 ? 100 ? d ambient temperature t a ( c ) relative collector current ? i c (%) ambient temperature t a ( c ) collector-emitter cutoff current (base open) i ceo ( a) collector current i c (ma) rise time t r ( s)
2003 sep request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technical information described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. it neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) the products described in this material are intended to be used for standard applications or general elec- tronic equipment (such as office equipment, communications equipment, measuring instruments and house- hold appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus- tion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifica- tions satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maximum rat- ing, the range of operating power supply voltage, and heat radiation characteristics. otherwise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2003 sep caution for safety danger this product contains gallium arsenide (gaas). gaas powder and vapor are hazardous to human health if inhaled or ingested. do not burn, destroy, cut, cleave off, or chemically dis- solve the product. follow related laws and ordinances for disposal. the product should be excluded form general industrial waste or household garbage.
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